Fluoride-target-assisted growth of Pb <sub>2</sub> OF <sub>2</sub> oxyfluoride films with anion ordering and high dielectric constant
Fabrication methods for mixed anion compounds are presented through the synthesis of lead oxyfluoride films. The work shows that controlling substrate temperature enables oriented growth, which enhances the material's dielectric constant.
Authors
- Akira Chikamatsu (ORCID: https://orcid.org/0000-0003-0484-6356)
- Tsukasa Katayama (ORCID: https://orcid.org/0000-0003-2010-3966)
- Hiromichi Ohta (ORCID: https://orcid.org/0000-0001-7013-0343)
- Weikun Zhou (ORCID: https://orcid.org/0000-0002-5350-4953)
- Ko Marunouchi
- Rion Muraki
Institutions
- Otsuka (Japan) (JP)
- Hokkaido University (JP)
- Ochanomizu University (JP)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01975c
- Primary Topic
- Silicone and Siloxane Chemistry
- Type
- article
- Field-Weighted Citation Impact
- 0.00