Effects of substrate orientation and oxygen partial pressure on the growth of Ga <sub>2</sub> O <sub>3</sub> films and the performance of solar-blind ultraviolet photodetectors
This work establishes guidelines for the growth of α-Ga 2 O 3 and β-Ga 2 O 3 by analyzing the effects of substrate orientation and PLD process parameters (oxygen partial pressure) on phase composition and performance.
Authors
- Mengfan Xu (ORCID: https://orcid.org/0009-0005-9951-1648)
- Haowen Guo (ORCID: https://orcid.org/0000-0002-1901-3958)
- Wenxiang Mu (ORCID: https://orcid.org/0000-0002-6844-7808)
- Qianqian Zhan
- Zhitai Jia (ORCID: https://orcid.org/0000-0002-7534-8082)
- Yang Li (ORCID: https://orcid.org/0000-0002-9544-5840)
- Liang Yue (ORCID: https://orcid.org/0000-0001-6478-7306)
- Baitao Zhang
Institutions
- Shandong University (CN)
- Qingdao Academy of Intelligent Industries (CN)
- State Key Laboratory of Crystal Materials
Publication Details
- Journal
- CrystEngComm
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5ce00788g
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00