Effect of non-metal atom adsorption on the electronic, magnetic, optical and HER properties of a Ga <sub>2</sub> O <sub>3</sub> monolayer: a first-principles study
First-principles calculations have been carried out to explore the structural, magnetic, electronic, optical and HER properties of non-metal-adatom-functionalized Ga<sub>2</sub>O<sub>3</sub> monolayers. All adatoms lead to enhanced metallicity, a wider optical absorption region, better HER activity and lower work function of the Ga<sub>2</sub>O<sub>3</sub> monolayer. In particular, the B-adsorbed Ga<sub>2</sub>O<sub>3</sub> monolayer and P-adsorbed Ga<sub>2</sub>O<sub>3</sub> monolayer with -2% strain in the <i>Y</i> direction demonstrate extraordinary HER performance (their H adsorption free energies are -0.019 and -0.043 eV, respectively). The Se-adsorbed Ga<sub>2</sub>O<sub>3</sub> monolayer exhibits ultrahigh ultraviolet and visible-light absorption capacity, attributed to its unique Se adsorption structure and strongly enhanced metallicity. Our calculations provide an effective method to modulate the structural, magnetic, optoelectronic and HER properties of a Ga<sub>2</sub>O<sub>3</sub> monolayer for device applications.
Authors
- Rongzhi Wang (ORCID: https://orcid.org/0000-0002-9810-7118)
- Jin‐Cheng Zheng (ORCID: https://orcid.org/0000-0002-6292-3236)
Institutions
- Xiamen University (CN)
- Xiamen University Malaysia (MY)
Publication Details
- Journal
- Physical Chemistry Chemical Physics
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cp01906k
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00