Unidirectional Epitaxy of Wafer-Scale MoS₂ on Sapphire via Growth Kinetics Control

Wafer-scale single-crystalline MoS2 epitaxially grown on sapphire by chemical vapor deposition (CVD) is expected to exhibit exceptional electrical and optoelectronic properties for the large-scale integration of two-dimensional (2D) semiconductor circuits. Prior studies proposed thermodynamic pathways for achieving unidirectional MoS2 domains. However, thermodynamic conditions are insufficient to achieve wafer-scale growth of unidirectional MoS2, while kinetic control during epitaxy remains unexplored. Here, we demonstrate the kinetics-driven adatoms diffusion and nuclei rotation by controlling the epitaxy temperature during the CVD process. We achieve the epitaxy of triangular MoS2 single-crystalline domains with a single orientation on sapphire. By carefully designing the Mo oxidation, dual-source delivery, and two-stage annealing, the nucleation density of MoS2 is reduced, and the domain size and uniformity are greatly enhanced. The fine control of the growth kinetics boosts the 2 in. wafer-scale continuous MoS2 single-crystalline film. The uniformity and single crystallinity were confirmed by Raman spectroscopy, photoluminescence, atomic force microscopy, low-energy electron diffraction, and second-harmonic generation. Furthermore, field-effect MoS2 transistors exhibited high room-temperature mobility up to 118 cm2·V–1·s–1, high on/off ratio over 1010, and steep subthreshold swing of ∼85 mV·dec–1. This work not only provides a feasible strategy for the manufacture of high-quality wafer-scale MoS2 films but also sheds light on the growth of other 2D semiconductor wafers.