Thin layer of chalcogenide spinel deposited by PLD method

The growing global population heightens the demand for sustainable energy, urging advancements in solar cell efficiency. As traditional technologies approach performance limits, there is an urgent need to explore new photovoltaic materials. A promising photovoltaic candidates, the family of ionic semiconductors of spinel type, Li<sub>2</sub>ASn<sub>3</sub>S<sub>8</sub> (where A=Cu, Mn or Fe), offers enhanced stability and defect tolerance compared to conventional materials. This study focuses on the preparation of copper lithium thiospinel via pulsed laser deposition technique (PLD). Complex chemical composition and presence of highly volatile sulphur require careful selection of growth parameters. We systematically examined the influence of laser fluence, laser repetition rate, gas pressure and the stoichiometry of the target. Analysing the chemical composition of samples grown under , the parameters of the growth leading to a stoichiometric sample were established.

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Published
2025-09-09
DOI
https://doi.org/10.1117/12.3072755
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Thin layer of chalcogenide spinel deposited by PLD method

Kristina Vlášková, Neda Neyková, Jakub Holovský, Petr Veselý et al.
Chalcogenide Semiconductor Thin Films
article

Thin layer of chalcogenide spinel deposited by PLD method

Kristina Vlášková, Neda Neyková, Jakub Holovský, Petr Veselý, Lucie Landová, Naini Jain
article en

Abstract

The growing global population heightens the demand for sustainable energy, urging advancements in solar cell efficiency. As traditional technologies approach performance limits, there is an urgent need to explore new photovoltaic materials. A promising photovoltaic candidates, the family of ionic semiconductors of spinel type, Li<sub>2</sub>ASn<sub>3</sub>S<sub>8</sub> (where A=Cu, Mn or Fe), offers enhanced stability and defect tolerance compared to conventional materials. This study focuses on the preparation of copper lithium thiospinel via pulsed laser deposition technique (PLD). Complex chemical composition and presence of highly volatile sulphur require careful selection of growth parameters. We systematically examined the influence of laser fluence, laser repetition rate, gas pressure and the stoichiometry of the target. Analysing the chemical composition of samples grown under , the parameters of the growth leading to a stoichiometric sample were established.

FZU ‒ Institute of Physics of the Academy of Sciences of the Czech Republic (CZ), Czech Technical University in Prague (CZ)
Openalex Percentile: Top 76%
Chalcogenide Semiconductor Thin Films
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