Performance Analysis of 2 Barrier Exponentially Damped Model of Gaas-Algaas Compared with 1 Barrier Lorentzian Damped Model

This study compares the performance of a 1 barrier Lorentzian damped resonant tunneling diode with a 2 barrier exponentially damped diode in terms of peak current, bias voltage. The analysis of resonant tunneling diodes (RTDs) was conducted using the NanoHub simulation software, specifically utilizing the Resonant Tunneling Diode simulation with Non-Equilibrium Green's Function (NEGF) tool. Specifically the 2 types of RTD devices are investigated for analyzing the material properties for future electronic application. The input parameters of all the devices are fixed The lattice constant was 0.2833 nm, the ambient temperature was 300 k, and the starting bias was 0 volts. The ending bias voltage was 0.5 volts for the Reservoir Relaxation model with an Exponentially Damped Model setting. Conversely, the Reservoir Relaxation Model for the one-barrier device was configured using a Lorentzian Damped Model. A comparison of the two Models is done with SPSS software. The output analysis reveals significant differences between the 2-barrier exponentially damped model and the 1 -barrier Lorentzian damped model. In the 2-barrier exponentially damped model, the peak current reaches 8114.93 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at a bias voltage of 0.5. Conversely, the 1 -barrier Lorentzian damped model exhibits a peak current of 70830 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at the same 0.5 bias voltage. The Lorentzian damped model of a single barrier device is better than the exponentially damped model based on the peak current and transmission coefficient study.