Enhancing The Dependability of Gallium Nitride Diode Through Adjustment in the Fabrication Process

Enhancing the reliability and performance of Gallium Nitride (5) diodes through precise fabrication adjustments offers significant benefits for power electronics and telecommunications. The research compares four silicon diodes and four GaN diodes, with sample size calculated via clinical.com (alpha = 0.05, power = 80%, ratio = 1). An 80 nm solder thickness enabled GaN diodes to reach a temperature accuracy of 265°C, surpassing the 247°C of silicon diodes and demonstrating improved thermal precision. GaN diodes exhibit greater thermal stability due to their higher melting point, while silicon's lower melting point results in increased time dependence near critical temperatures. This contrast highlights the superior efficiency and durability of GaN models. The experiment emphasizes how material properties directly affect thermal response and diode longevity. These findings support the adoption of GaN diodes in advanced, high-demand technological applications.