One-step synthesis of graphene containing topological defects

Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.

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Publication Details

Journal
Chemical Science
Published
2025-01-01
DOI
https://doi.org/10.1039/d5sc03699b
Citations
1
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.52

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One-step synthesis of graphene containing topological defects

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One-step synthesis of graphene containing topological defects

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article en
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Abstract

Chemical vapour deposition enables large-domain growth of ideal graphene, yet many applications of graphene require the controlled inclusion of specific defects. We present a one-step chemical vapour deposition procedure aimed at retaining the precursor topology when incorporated into the grown carbonaceous film. When azupyrene, the molecular analogue of the Stone-Wales defect in graphene, is used as a precursor, carbonaceous monolayers with a range of morphologies are produced as a function of the copper substrate growth temperature. The higher the substrate temperature during deposition, the closer the resulting monolayer is to ideal graphene. Analysis, with a set of complementary materials characterisation techniques, reveals morphological changes closely correlated with changes in the atomic adsorption heights, network topology, and concentration of 5-/7-membered carbon rings. The engineered defective carbon monolayers can be transferred to different substrates, potentially enabling applications in nanoelectronics, sensorics, and catalysis.

Chemical ScienceVol. 16(41)
Carl von Ossietzky Universität Oldenburg (DE), University of Nottingham (GB), University of St Andrews (GB), University of Cambridge (GB), Diamond Light Source (GB), University of Manchester (GB), Henry Royce Institute (GB), University of Warwick (GB), University of Oxford (GB), MAX IV Laboratory (SE), Technical University of Munich (DE), University of Glasgow (GB)
Queen Mary University of London, Diamond Light Source, UK Research and Innovation, University of Warwick, Deutsche Forschungsgemeinschaft, Engineering and Physical Sciences Research Council
Openalex Percentile: Top 33%
Graphene research and applications
0.52
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