Low temperature insulator–semiconductor transition in NiCo2S4/Co9S8 nanocomposites

This study reports on the magnetoresistance, transport, and optical properties of NiCo2S4/Co9S8 nanocomposites synthesized via a microwave-assisted hydrothermal method. The sample shows positive magnetoresistance at 5, 10, and 80 K, with resistivity (ρ) vs temperature plots exhibiting semiconducting behavior under applied magnetic fields of 0, 0.05, 1, 5, and 8 T. The resistivity decreases rapidly with increasing temperature, and the first derivative of resistivity reveals an insulator-to-semiconductor transition near 11.14 K under all applied fields. At low temperatures, the material shows semiconducting behavior, with ρ(T) data fitting well to the weak localization effect and power law of resistivity. In addition to these electrical and magnetic properties, PL spectra exhibit emission peaks at 686 and 795 nm, indicating the presence of multiple defect states such as sulfur vacancies and lattice distortions. The energy bandgap of the sample is extracted from the Tauc plot and is found to be 2.25 eV. X-ray diffraction and Raman spectra confirm the crystalline structure, and transmission electron microscopy shows the formation of nanocomposites.

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Publication Details

Journal
AIP Advances
Published
2025-09-01
DOI
https://doi.org/10.1063/5.0286380
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
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article

Low temperature insulator–semiconductor transition in NiCo2S4/Co9S8 nanocomposites

Padmakar G. Chavan, Charudipa D. Kamble, Devendra Kumar, Shilpa D. Kamble et al.
AIP Advances
ZnO doping and properties
article

Low temperature insulator–semiconductor transition in NiCo2S4/Co9S8 nanocomposites

Padmakar G. Chavan, Charudipa D. Kamble, Devendra Kumar, Shilpa D. Kamble, U. P. Gawai, Rajkumar M. Lokhande
article en

Abstract

This study reports on the magnetoresistance, transport, and optical properties of NiCo2S4/Co9S8 nanocomposites synthesized via a microwave-assisted hydrothermal method. The sample shows positive magnetoresistance at 5, 10, and 80 K, with resistivity (ρ) vs temperature plots exhibiting semiconducting behavior under applied magnetic fields of 0, 0.05, 1, 5, and 8 T. The resistivity decreases rapidly with increasing temperature, and the first derivative of resistivity reveals an insulator-to-semiconductor transition near 11.14 K under all applied fields. At low temperatures, the material shows semiconducting behavior, with ρ(T) data fitting well to the weak localization effect and power law of resistivity. In addition to these electrical and magnetic properties, PL spectra exhibit emission peaks at 686 and 795 nm, indicating the presence of multiple defect states such as sulfur vacancies and lattice distortions. The energy bandgap of the sample is extracted from the Tauc plot and is found to be 2.25 eV. X-ray diffraction and Raman spectra confirm the crystalline structure, and transmission electron microscopy shows the formation of nanocomposites.

AIP AdvancesVol. 15(9)
Kavayitri Bahinabai Chaudhari North Maharashtra University (IN), Sanskriti Samvardhan Mandal (IN), UGC DAE Consortium for Scientific Research (IN), G.S. Science, Arts And Commerce College (IN)
Openalex Percentile: Top 81%
ZnO doping and properties
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Low temperature insulator–semiconductor transition in NiCo2S4/Co9S8 nanocomposites — Padmakar G. Chavan, Charudipa D. Kamble, et al. · AIP Advances (2025) | TGRS Research Map | TGRS