Research on Fundamental Principles and Performance Optimization Strategies in Lithography Technology

This paper provides a comprehensive review of recent advances in lithography technologies, focusing on Deep Ultraviolet (DUV), Extreme Ultraviolet (EUV), and Nanoimprint Lithography (NIL). This work synthesizes findings from existing studies to highlight the fundamental principles, performance characteristics, and practical challenges of each method. The comparison centers on key metrics, including resolution, depth of focus, exposure dose, line-edge roughness, overlay accuracy, and throughput, revealing how different approaches balance these competing factors. DUV lithography offers process maturity and cost efficiency but relies on multiple patterning to extend scaling. EUV provides higher intrinsic resolution, though it is constrained by source power, resist sensitivity, and stochastic variation. NIL demonstrates excellent resolution potential and process simplicity, yet defect control and alignment remain critical barriers for large-scale deployment. By consolidating insights across optical, material, and metrology domains, this review clarifies the trade-offs that shape manufacturability and points to opportunities for hybrid solutions, material innovation, and sustainable process design. The analysis concludes with perspectives on how coordinated progress in optics, resists, and alignment strategies can enable continued semiconductor scaling.