Fabrication of the Planar SiC Gate-all-Around JFET with Channel Dose Modulation
Currently, silicon carbide (SiC) is widely recognized as a wide bandgap semiconductor, with expanding applications in harsh environments, such as high temperature and radiation exposure. In this study, we fabricated a planar structure 4H-SiC gate-all-around junction field-effect transistor (JFET), wherein the channel region is formed through ion implantation at varying doses. We successfully produced both normally-on and normally-off JFETs. Moreover, we constructed a JFET commonsource amplifier. The amplifiers achieved a maximum gain of -226.7 (47.1 dB) at a supply voltage of V DD = 30 V.
Authors
- Hitoshi Umezawa (ORCID: https://orcid.org/0000-0002-0838-4497)
- Koji Nakayama (ORCID: https://orcid.org/0000-0003-3559-9554)
- Takeharu Kuroiwa (ORCID: https://orcid.org/0000-0001-5892-0561)
- Shin-Ichiro Kuroki (ORCID: https://orcid.org/0000-0002-0539-9941)
- Yasunori Tanaka (ORCID: https://orcid.org/0000-0002-7986-608X)
- Masayuki Yamamoto (ORCID: https://orcid.org/0000-0002-9073-9436)
- Takanori Amamiya
Institutions
- Hiroshima University (JP)
Publication Details
- Journal
- Materials science forum
- Published
- 2025-09-09
- DOI
- https://doi.org/10.4028/p-xm5gzm
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Ministry of Education, Culture, Sports, Science and Technology
- Japan Society for the Promotion of Science