Effects of Sulfurization on the Properties of 4H-SiC Schottky Contacts
This paper reports on the effect of a sulfurization thermal process of the silicon carbide surface on the properties of Ni/4H-SiC Schottky barrier. In particular, the incorporation of sulfur (S) in the 4H-SiC near-surface region was observed at the process performed at 800 °C, without any significant effect on the surface morphology. On the other hand, Ni/4H-SiC Schottky contacts fabricated on the sulfurized 4H-SiC surface showed a 0.3 eV reduction of the average barrier height with a narrower distribution, with respect to the untreated sample. These results were explained by an increase of the 4H-SiC electron affinity after sulfurization, and a Fermi level pinning effect.
Authors
- Fabrizio Roccaforte (ORCID: https://orcid.org/0000-0001-8632-0870)
- Salvatore Di Franco (ORCID: https://orcid.org/0000-0002-9399-1696)
- Attila Sulyok (ORCID: https://orcid.org/0000-0001-9467-365X)
- Filippo Giannazzo (ORCID: https://orcid.org/0000-0002-0074-0469)
- Antal A. Koós (ORCID: https://orcid.org/0000-0003-0563-948X)
- Salvatore Ethan Panasci (ORCID: https://orcid.org/0000-0002-6090-9211)
- Giuseppe Greco (ORCID: https://orcid.org/0000-0001-9423-1413)
- B. Pécz (ORCID: https://orcid.org/0000-0002-4651-6972)
- Marilena Vivona (ORCID: https://orcid.org/0000-0002-0765-8556)
- Patrick Fiorenza (ORCID: https://orcid.org/0000-0002-9633-7892)
Institutions
- HUN-REN Centre for Energy Research (HU)
- Institute for Microelectronics and Microsystems (IT)
Publication Details
- Journal
- Materials science forum
- Published
- 2025-09-09
- DOI
- https://doi.org/10.4028/p-j9hda2
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- European Commission