Silicon nanophotonic waveguides using rare earth ion diffusion technology
The paper presents the design of a silicon-based nanophotonic active optical waveguide, in which rare earth ions are diffused into enhanced passive waveguides fabricated on a silicon-on-insulator (SOI) platform. Since erbium (Er)-doped waveguides can provide a higher gain coefficient in an Al₂O₃ waveguide cladding, a novel approach is proposed to further enhance the gain of an erbium-doped waveguide amplifier (EDWA). This method utilizes a subwavelength waveguide structure, where a film surrounds the segmented SOI waveguide. The proposed approach enables improved gain performance in widely used SOI waveguides by leveraging the advantages of an Er-doped Al₂O₃ layer.
Authors
- David Mareš (ORCID: https://orcid.org/0000-0002-1735-4644)
- Jiří Šmejcký (ORCID: https://orcid.org/0000-0002-4516-2682)
- Pavla Nekvindová (ORCID: https://orcid.org/0000-0001-9448-0815)
- Petr Vařák (ORCID: https://orcid.org/0000-0001-8026-0686)
- Alexandr Pošta
- San‐Liang Lee (ORCID: https://orcid.org/0000-0003-2436-0273)
- Zhiqing Huang (ORCID: https://orcid.org/0000-0002-0598-3742)
- V. Jeřábek (ORCID: https://orcid.org/0000-0002-4212-7574)
Institutions
- National Taiwan University of Science and Technology (TW)
- Czech Technical University in Prague (CZ)
- Brno University of Technology (CZ)
- University of Chemistry and Technology, Prague (CZ)
Publication Details
- Published
- 2025-09-09
- DOI
- https://doi.org/10.1117/12.3075110
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00