Simulation and Research of the Breakdown Characteristics of Trench-type SiC LDMOS

To address the optimization of breakdown characterristics in silicon carbide (SiC) trench-type lateral double-diffused metal-oxide-semiconductor (Trench LDMOS) devices, this study establishes a three-dimensional device model based on the Silvaco TCAD simulation platform. The work focuses on analyzing the synergistic effects of trench width and depth on the breakdown performance of the device. Simulation results demonstrate that, compared to conventional SiC LDMOS devices, the proposed trench-structured SiC LDMOS achieves a 126.23% improvement in breakdown voltage and a 192% increase in figure of merit (FOM). The study reveals the underlying mechanism whereby the trench structure facilitates electric field redistribution through modulation of lateral and vertical charge balance. These findings significantly enhance device performance and provide new theoretical insights for the design of high-voltage SiC LDMOS devices.