Multiphysics-Coupled Comparative Study of Bond-Wire and Clip Interconnections Aging in SiC Power Modules

As the demand for higher power density in silicon carbide (SiC) modules increases, traditional bond wire interconnections (BWI) face significant reliability challenges, positioning copper clip interconnections (CCI) as a promising alternative. This paper presents a comparative analysis of the failure mechanisms and Multiphysics coupling characteristics of BWI and CCI. Coupled electro-thermal-mechanical models were developed in COMSOL multiphysics simulator to systematically evaluate their failure behaviors. Simulation results indicate that CCI offers superior thermal dissipation and more uniform current distribution and induces lower stress concentration at the chip-bonding interface. The primary failure mechanism for BWI is identified as plastic strain accumulation in the wire, whereas solder layer creep dominates in CCI. Fatigue analysis predicts that the operational lifetime of CCI is 2.3 times longer than that of BWI.