Gate Oxide Insulators on Surface-Channeled Diamond for Metal-Oxide-Semiconductor Electronic Devices

Various oxide insulators are formed on surface-channeled hydrogen-terminated diamond epitaxial layer (H-diamond) for metal-oxide-semiconductor (MOS) capacitors. The leakage current properties of the MOS capacitors and the dielectric constants of the oxide insulators are illustrated. As the dielectric constant increases, there is a decrease in the leakage current density. Additionally, the electrical properties of MOS field-effect transistors with different oxide insulators are summarized.