Activating Basal Plane Inert Sites of Iron Telluride for Motivational Electromagnetic Microwave Absorption (Small 36/2025)
Electromagnetic Microwave Absorption In article number 2502920, Qinghai Shu, Xijuan Lv, Jiadong Zhou, and co-workers reported a dual-defect engineering in FeTe flakes via one-step O2 plasma treatment. Te vacancies and O incorporation activates basal plane inert sites and boosts polarization relaxation loss. This approach offers a promising pathway toward high-performance electromagnetic microwave absorption.
Authors
- Wei Jiang (ORCID: https://orcid.org/0000-0001-6167-1156)
- Qinghai Shu (ORCID: https://orcid.org/0000-0002-2818-0491)
- Ziyang Guo (ORCID: https://orcid.org/0000-0002-2577-2512)
- Xijuan Lv (ORCID: https://orcid.org/0009-0007-9197-2452)
- Lu Lv (ORCID: https://orcid.org/0000-0002-6406-261X)
- Jiadong Zhou (ORCID: https://orcid.org/0000-0001-5268-2136)
- Liyuan Qin (ORCID: https://orcid.org/0000-0002-2648-1207)
- Yang Yang (ORCID: https://orcid.org/0000-0002-9373-127X)
- Lin Jia (ORCID: https://orcid.org/0000-0003-3479-8711)
Institutions
- Shanghai University (CN)
- Beijing Institute of Technology (CN)
Publication Details
- Journal
- Small
- Published
- 2025-09-01
- DOI
- https://doi.org/10.1002/smll.70315
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00