The Gain Theory of Doped Photoconductive Devices
In this work, by introducing effective carrier mobilities, it is shown that effective drift and diffusion lengths of both carriers are equal. By considering effective lifetime and photocurrent of majority carriers, a novel analytic solution of photoconductive gain for doped devices is obtained.
Authors
- Nenad Vrucinic
Institutions
- University of North Carolina at Charlotte (US)
Publication Details
- Published
- 2025-08-13
- DOI
- https://doi.org/10.1109/rapid64712.2025.11151503
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00