The Gain Theory of Doped Photoconductive Devices

In this work, by introducing effective carrier mobilities, it is shown that effective drift and diffusion lengths of both carriers are equal. By considering effective lifetime and photocurrent of majority carriers, a novel analytic solution of photoconductive gain for doped devices is obtained.

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Published
2025-08-13
DOI
https://doi.org/10.1109/rapid64712.2025.11151503
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
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article

The Gain Theory of Doped Photoconductive Devices

Nenad Vrucinic
Ga2O3 and related materials
article

The Gain Theory of Doped Photoconductive Devices

Nenad Vrucinic
article en

Abstract

In this work, by introducing effective carrier mobilities, it is shown that effective drift and diffusion lengths of both carriers are equal. By considering effective lifetime and photocurrent of majority carriers, a novel analytic solution of photoconductive gain for doped devices is obtained.

University of North Carolina at Charlotte (US)
Openalex Percentile: Top 84%
Ga2O3 and related materials
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The Gain Theory of Doped Photoconductive Devices — Nenad Vrucinic · (2025) | TGRS Research Map | TGRS