High Temperature Studies of Near-UV InGaN/GaN Laser Diodes
In this work, we investigate the effects of operation temperature on the emission spectra, lasing threshold current density, and slope efficiency of GaN UV-A laser diodes with cleaved mirror facets emitting at approximately 376 nm.
Authors
- Matthew Dwyer (ORCID: https://orcid.org/0000-0002-1318-1985)
- Shubhra S. Pasayat
- Matthew Seitz (ORCID: https://orcid.org/0000-0003-1318-3857)
- Chirag Gupta (ORCID: https://orcid.org/0000-0003-4143-9231)
- Luke Mawst
- Guangying Wang (ORCID: https://orcid.org/0000-0002-4278-3037)
- Stephanie Smith (ORCID: https://orcid.org/0000-0002-1932-6516)
- Cheng Liu (ORCID: https://orcid.org/0000-0002-3509-951X)
- Jacob Boisvere
- Jing Zhang (ORCID: https://orcid.org/0000-0002-4918-685X)
- Qinchen Lin (ORCID: https://orcid.org/0009-0006-6406-4240)
- Tom Earles
Institutions
- University of Wisconsin–Madison (US)
- Rochester Institute of Technology (US)
Publication Details
- Published
- 2025-08-13
- DOI
- https://doi.org/10.1109/rapid64712.2025.11151455
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00