InGaAs/GaAsSb Type-II Superlattice pBp Photodetectors for the Extended Short-Wave Infrared
InGaAs/GaAsSb type-II superlattice photodetectors are synthesized and characterized, utilizing a unipolar holeblocking barrier composed of InP. These detectors show a response in the short-wave infrared out to <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\sim 2.5\ \mu \mathrm{m}$</tex>, with a dark current density of 0.739 mA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> biased at 0.2 V at 300 K.
Authors
- Evan M. Anderson (ORCID: https://orcid.org/0000-0002-3771-3085)
- Vipul J. Patel (ORCID: https://orcid.org/0000-0002-2177-094X)
- Samuel D. Hawkins (ORCID: https://orcid.org/0000-0002-4705-1628)
- Mary Rosprim
- Aaron J. Muhowski (ORCID: https://orcid.org/0000-0002-5659-6136)
- Priyanka Petluru (ORCID: https://orcid.org/0000-0002-5715-4284)
- Courtney Sovinec (ORCID: https://orcid.org/0000-0001-8933-5066)
Institutions
- Sandia National Laboratories (US)
Publication Details
- Published
- 2025-08-13
- DOI
- https://doi.org/10.1109/rapid64712.2025.11151278
- Primary Topic
- Advanced Semiconductor Detectors and Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00