MOCVD Growth of GaN/InN/GaN Quantum Wells
The growth of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{GaN} / \text{InN} / \text{GaN}$</tex> quantum wells via MOCVD without flow-modulation or plasma-assistance is presented. A growth supersaturation model is employed which enables unification of all reaction conditions (temperature, pressure, flow rates, etc.) into a single parameter. Ultimately, state-of-the-art quantum wells with abrupt interfaces are produced.
Authors
- Seiji Mita (ORCID: https://orcid.org/0009-0002-8312-107X)
- Ronny Kirste (ORCID: https://orcid.org/0000-0002-2596-4450)
- Masahiro Kamiyama (ORCID: https://orcid.org/0009-0001-9601-6394)
- Monica Allen (ORCID: https://orcid.org/0000-0003-4440-6451)
- Zlatko Sitar (ORCID: https://orcid.org/0000-0002-7385-0837)
- Ramón Collazo (ORCID: https://orcid.org/0000-0002-5229-3824)
- Jeffery Allen (ORCID: https://orcid.org/0000-0002-7936-2252)
- Michael J. Carter (ORCID: https://orcid.org/0000-0002-8639-4930)
- Md Fahel Bin Noor
Institutions
- United States Air Force Research Laboratory (US)
- North Carolina State University (US)
- Adroit Materials (United States) (US)
Publication Details
- Published
- 2025-08-13
- DOI
- https://doi.org/10.1109/rapid64712.2025.11151366
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00