Future System-on-Chip for Full Spectrum Utilization from RF to Optics

We propose to develop a novel n-MOS device with heterogeneously integrated cubic-phased GaN-drain by using selective-area-growth over V-grooved Si-(100) surface. We then elaborate possible growths of multi-wavelength photonic devices atop cubic-GaN Drain with various indium contents of InGaN/GaN super-lattices for RF-to-optical combined system-on-chip applications.