Zinc Diffusion Technique for Fabrication of Narrow Band Infrared Detectors

Diffusion technique was used to fabricate planar type II superlattice infrared photodetectors. In this work, we present mid-wavelength infrared photodetectors based on III-V InAs/InAs<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</inf>Sb<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</inf> superlattice. Metal Organic Chemical Vapor Deposition growth technique was used to grow the material and perform the diffusion. Zinc was used as a p-type dopant for junction generation. Fabrication technique, diffusion process along with the electrical and optical performance of the planar devices are presented.