Low-Temperature HfO<sub>2</sub> Growth by Atomic Layer Deposition for Hgcdte -Based Infrared Photodetectors
Hafnium dioxide (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex>) was grown at 100°C and incorporated into <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{H g}_{\mathbf{0. 7 2}} \mathbf{C d}_{\mathbf{0. 2 8}} \mathbf{T e}$</tex>-based photodetectors. The <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{H f O}_{\mathbf{2}}$</tex> growth rate was <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1.418 \AA /$</tex> cycle with a refractive index of 2.09 and a negligible extinction coefficient at 1680 nm. The photodetectors generated a photocurrent of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$231 \mu ~\mathrm{A}$</tex> under an incident power density of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{1. 7 3 ~ m W} / \mathbf{c m}^{\mathbf{2}}$</tex> at a wavelength of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\mathbf{4} \boldsymbol{\mu} \mathbf{m}$</tex>.
Authors
- В. Н. Шеремет (ORCID: https://orcid.org/0000-0003-0840-5312)
- Md Fazle Rabbe (ORCID: https://orcid.org/0000-0002-3135-2776)
- Md. Shahriar Rahman
- Md. Sojib (ORCID: https://orcid.org/0000-0002-5906-2076)
- Nibir K. Dhar (ORCID: https://orcid.org/0000-0002-6663-2209)
Institutions
- Virginia Commonwealth University (US)
Publication Details
- Published
- 2025-08-13
- DOI
- https://doi.org/10.1109/rapid64712.2025.11151403
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00