Electrical Beam Control in a Compound Semiconductor Metalens

In this presentation, we report an experimental demonstration of electrically controlled III-V active metalenses. By modulating the electronic band structure of a GaAs-based metalens, the intensity and the curvature of the transmitted wavefront were externally controlled.

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Published
2025-08-13
DOI
https://doi.org/10.1109/rapid64712.2025.11151357
Primary Topic
Metamaterials and Metasurfaces Applications
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article
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article

Electrical Beam Control in a Compound Semiconductor Metalens

Sang-Yeon Cho, Charles Pelzman, Jason Sun
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Metamaterials and Metasurfaces Applications
article

Electrical Beam Control in a Compound Semiconductor Metalens

Sang-Yeon Cho, Charles Pelzman, Jason Sun
article en

Abstract

In this presentation, we report an experimental demonstration of electrically controlled III-V active metalenses. By modulating the electronic band structure of a GaAs-based metalens, the intensity and the curvature of the transmitted wavefront were externally controlled.

DEVCOM Army Research Laboratory (US), United States Army Combat Capabilities Development Command (US)
Openalex Percentile: Top 84%
Metamaterials and Metasurfaces Applications
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Electrical Beam Control in a Compound Semiconductor Metalens — Sang-Yeon Cho, Charles Pelzman, et al. · (2025) | TGRS Research Map | TGRS