Study of quantum dot injected inside double gate IT-TFET for digital and analog chip applications

Abstract In this paper, a novel Quantum Dot based Inverted T-shaped TFET (QD-IT-TFET) has been proposed. We have studied the IT-TFET structure with Silicon and Germanium based quantum dot injected into the device. In this IT-TFET structure we have introduced semiconductor quantum dot at interface of source and channel and compare the result with different number of QDs inside the TFET structure. We have chosen the optimize gate thickness of the QD-IT-TFET structure. The dual gate TFET was chosen as it provides flexibility over electrostatics control, reduce ambipolar current; improves ON current, lowers subthreshold slope and increases I ON / I OFF ratio. We have performed analysis of Digital and analog parameters for the QD-IT-TFET structure. This novel technique of introducing quantum dots in TFET Ge-QD-IT-TFET shows peak performance in terms of ON current with value of I ON 3.6 × 10 −5 A μm −1 , with Subthreshold Swing (SS) having a value of (35.2 mV dec −1 ) and low OFF current of order 10 −18 A μm −1 . In this study, with the injection of quantum dots in TFET structure we have been able to achieve higher I ON / I OFF ratio with the value (10 13 ). We compare our results for IT-TFET structures with and without injection of different numbers and types of quantum dots within the device. These attributes for our proposed quantum dot injected TFET makes it a highly promising candidate for extremely-low-power digital and analog AI chip applications.