Analysis of some equations suggested for current-voltage-temperature characteristics of inhomogeneous Schottky barrier diodes in the literature

The current-voltage-temperature (I-V-T) characteristics of an inhomogeneous n-type Si Schottky barrier diode have been simulated with the current equations by Tung and Im, who has improved Tung’s modified thermionic emission (TE) equation. The total current in the suggested equations consists of the TE current and the patch current components. The TE current component dominated down to about 75 K at low standard deviation and down to about 125 K at high standard deviation. That is, the temperature at which the patch current component begins to dominate increases with an increase in the standard deviation. In order to determine the expected temperature at which the patch current should be dominant, it was concluded that the patch component in the total current across the device should not include the Schottky contact field quantity A. Also, although the term included to Tung’s equation to reduce the contribution of the TE current component by Im is quite useful and necessary, it is seen that the included term is not effective enough to reduce the contribution because its value is too close to unity.