Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum biosensing. Here, we demonstrate through ab initio simulations of a primary quantum defect in 4H silicon carbide that strain is an effective control parameter for significantly enhancing readout contrast. We validate this principle experimentally by inducing local strain in silicon carbide-on-insulator membranes, achieving a readout contrast exceeding 60% while preserving the favorable coherence properties of single spins. Our findings establish strain engineering as a powerful strategy for optimizing coherent spin-photon interfaces in PL6 divacancy centers within silicon carbide membranes and potentially other similar defect systems.

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Publication Details

Journal
Physical Review Letters
Published
2025-09-10
DOI
https://doi.org/10.1103/tdb3-tqfv
Citations
2
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
1.46
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article

Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Chengwen Jiang, Xinfang Nie, Zhengtong Liu, Bo Liang et al.
2 citations
Physical Review Letters
Semiconductor materials and devices
1.46
article

Strain-Enhanced Spin Readout Contrast in Silicon Carbide Membranes

Chengwen Jiang, Xinfang Nie, Zhengtong Liu, Bo Liang, Qinghai Song, Qi Luo, Shumin Xiao, Guodong Bian, Xin Ou, Ádám Gali, Yu Zhou, Haibo Hu, Ailun Yi, Dawei Lu, Junhua Tan
article en
2 citations

Abstract

Quantum defects in solids have emerged as a transformative platform for advancing quantum technologies. A key requirement for these applications is achieving high-fidelity single-spin readout, particularly at room temperature for quantum biosensing. Here, we demonstrate through ab initio simulations of a primary quantum defect in 4H silicon carbide that strain is an effective control parameter for significantly enhancing readout contrast. We validate this principle experimentally by inducing local strain in silicon carbide-on-insulator membranes, achieving a readout contrast exceeding 60% while preserving the favorable coherence properties of single spins. Our findings establish strain engineering as a powerful strategy for optimizing coherent spin-photon interfaces in PL6 divacancy centers within silicon carbide membranes and potentially other similar defect systems.

Physical Review LettersVol. 135(11)
Harbin Institute of Technology (CN), Budapest University of Technology and Economics (HU), Southern University of Science and Technology (CN), HUN-REN Wigner Research Centre for Physics (HU), Peng Cheng Laboratory (CN), Shanxi University of Traditional Chinese Medicine (CN), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN)
Openalex Percentile: Top 15%
Semiconductor materials and devices
1.46
DOISourceOpenAlex
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