Current‐Induced Magnetization Switching via 180° Néel Vector Reversal in Pt/Cr <sub>2</sub> O <sub>3</sub> /Co Trilayers

The 180° switching of the perpendicular Néel vector induced by the spin-orbit torque (SOT) presents significant potential for ultradense and ultrafast antiferromagnetic SOT-magnetoresistive random-access memory. However, its experimental realization remains a topic of intense debate. Here, unequivocal evidence is provided for the SOT-induced 180° switching of the perpendicular Néel vector in collinear antiferromagnetic Cr<sub>2</sub>O<sub>3</sub> in a Pt/Cr<sub>2</sub>O<sub>3</sub>/Co trilayer structure. It is demonstrated that the 180° switching of the perpendicular Néel vector in Cr<sub>2</sub>O<sub>3</sub> can lead to the unconventional switching behavior of the Co layer on top of it. The switching polarity of the Co layer can be reversed after the insertion of the Cr<sub>2</sub>O<sub>3</sub> layer. Moreover, the exchange bias directions are switched simultaneously with the Co layer. The switching ratio of the Co layer is sensitive to the antiferromagnetic states of Cr<sub>2</sub>O<sub>3</sub> and can be tuned by field cooling. The results not only underpin the electrical switching of the perpendicular Néel vector in Cr<sub>2</sub>O<sub>3</sub> but are also beneficial for the development of antiferromagnetic-based devices.

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Publication Details

Journal
Advanced Materials
Published
2025-09-09
DOI
https://doi.org/10.1002/adma.202508347
Primary Topic
Magnetic properties of thin films
Type
article
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article

Current‐Induced Magnetization Switching via 180° Néel Vector Reversal in Pt/Cr 2 O 3 /Co Trilayers

Zheng Cheng, Yizheng Wu, Keck Voon Ling, Bin Fang et al.
1 links
Advanced Materials
Magnetic properties of thin films
article

Current‐Induced Magnetization Switching via 180° Néel Vector Reversal in Pt/Cr 2 O 3 /Co Trilayers

Zheng Cheng, Yizheng Wu, Keck Voon Ling, Bin Fang, Bicheng Li, Renchao Che, Ke Pei, Lei Cao, Yongming Luo, Chendi Yang, Hao Chen, Han‐Wen Cheng, Junjie Yuan
article en

Abstract

The 180° switching of the perpendicular Néel vector induced by the spin-orbit torque (SOT) presents significant potential for ultradense and ultrafast antiferromagnetic SOT-magnetoresistive random-access memory. However, its experimental realization remains a topic of intense debate. Here, unequivocal evidence is provided for the SOT-induced 180° switching of the perpendicular Néel vector in collinear antiferromagnetic Cr<sub>2</sub>O<sub>3</sub> in a Pt/Cr<sub>2</sub>O<sub>3</sub>/Co trilayer structure. It is demonstrated that the 180° switching of the perpendicular Néel vector in Cr<sub>2</sub>O<sub>3</sub> can lead to the unconventional switching behavior of the Co layer on top of it. The switching polarity of the Co layer can be reversed after the insertion of the Cr<sub>2</sub>O<sub>3</sub> layer. Moreover, the exchange bias directions are switched simultaneously with the Co layer. The switching ratio of the Co layer is sensitive to the antiferromagnetic states of Cr<sub>2</sub>O<sub>3</sub> and can be tuned by field cooling. The results not only underpin the electrical switching of the perpendicular Néel vector in Cr<sub>2</sub>O<sub>3</sub> but are also beneficial for the development of antiferromagnetic-based devices.

Advanced MaterialsVol. 38(1)
Donghua University (CN), Fudan University (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Collaborative Innovation Center of Chemistry for Energy Materials (CN), State Key Laboratory of Surface Physics, Hangzhou Dianzi University (CN)
Openalex Percentile: Top 82%
Magnetic properties of thin films
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