Temperature-Stabilized 850 nm High-Speed VCSEL With Modulation Bandwidth Over 30 GHz

We present an 850 nm vertical-cavity surface-emitting laser (VCSEL) featuring enhanced thermal stability and >30 GHz modulation bandwidth. The device maintains stable performance with bandwidths of 30.30 GHz at 25°C and 30.54 GHz at 55°C under 5 mA bias, showing minimal change. Notably, the bandwidth remains nearly constant across a wide current range (3-7 mA). The VCSEL exhibits excellent signal integrity, with relative intensity noise (RIN) consistently below -140 dB/Hz even at elevated temperatures. Advanced thermal management techniques, including polyimide integration and a double-mesa structure, effectively mitigate thermal impedance increase and carrier dynamics degradation. Furthermore, the device successfully achieves 106 Gbit/s PAM4 transmission, as evidenced by clear eye diagrams. These results demonstrate that our co-optimized thermal and carrier design represents a promising approach for developing robust optoelectronic devices capable of reliable high-temperature operation.

Authors

Institutions

Publication Details

Journal
IEEE Photonics Technology Letters
Published
2025-09-08
DOI
https://doi.org/10.1109/lpt.2025.3607402
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Temperature-Stabilized 850 nm High-Speed VCSEL With Modulation Bandwidth Over 30 GHz

Jian Qiang Feng, Shihao Ding, Zhen Qiu, Chuyu Zhong et al.
1 citations
IEEE Photonics Technology Letters
Semiconductor Lasers and Optical Devices
0.73
article

Temperature-Stabilized 850 nm High-Speed VCSEL With Modulation Bandwidth Over 30 GHz

Jian Qiang Feng, Shihao Ding, Zhen Qiu, Chuyu Zhong, Jinlong Lu, Wu Wang, Nannan Li, Hui Li, Wei Miao, Shupeng Deng
article en
1 citations

Abstract

We present an 850 nm vertical-cavity surface-emitting laser (VCSEL) featuring enhanced thermal stability and >30 GHz modulation bandwidth. The device maintains stable performance with bandwidths of 30.30 GHz at 25°C and 30.54 GHz at 55°C under 5 mA bias, showing minimal change. Notably, the bandwidth remains nearly constant across a wide current range (3-7 mA). The VCSEL exhibits excellent signal integrity, with relative intensity noise (RIN) consistently below -140 dB/Hz even at elevated temperatures. Advanced thermal management techniques, including polyimide integration and a double-mesa structure, effectively mitigate thermal impedance increase and carrier dynamics degradation. Furthermore, the device successfully achieves 106 Gbit/s PAM4 transmission, as evidenced by clear eye diagrams. These results demonstrate that our co-optimized thermal and carrier design represents a promising approach for developing robust optoelectronic devices capable of reliable high-temperature operation.

IEEE Photonics Technology LettersVol. 37(24)
Shenzhen Technology University (CN)
Openalex Percentile: Top 24%
Semiconductor Lasers and Optical Devices
0.73
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Temperature-Stabilized 850 nm High-Speed VCSEL With Modulation Bandwidth Over 30 GHz — Jian Qiang Feng, Shihao Ding, et al. · IEEE Photonics Technology Letters (2025) | TGRS Research Map | TGRS