Study on the Resistive Switching Properties of Semiconductor Films Heterojunction at Low Temperature
In this paper, we have prepared semiconductor films using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{YBa}_{2} \text{Cu}_{3} \mathrm{O}_{7}$</tex> (YBCO) conductive oxides as active electrodes. The transport characteristics and resistive switching mechanism of this semiconductor films heterostructures based on YBCO electrode has been studied. All these characteristics modulate the Schottky barrier of the interface by the movement and redistribution of oxygen vacancy, and therefore determine the resistive switching behavior of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{YBCO} / \text{ZrO}_{2} / \text{Pt}$</tex> semiconductor films heterostructure.
Authors
- Bo Deng (ORCID: https://orcid.org/0000-0002-7717-8865)
- Lei Xu (ORCID: https://orcid.org/0000-0003-3995-4138)
- K. Kou
- Fuxue Yan (ORCID: https://orcid.org/0000-0001-5467-5087)
- Ying Li (ORCID: https://orcid.org/0009-0004-8120-6250)
- Lei Li (ORCID: https://orcid.org/0000-0003-4830-724X)
- Yang Ren (ORCID: https://orcid.org/0000-0003-0791-510X)
- Zhiming Zhao
Institutions
- Xi'an University of Science and Technology (CN)
- Xi’an University (CN)
- China XD Group (China) (CN)
- China Power Engineering Consulting Group (China) (CN)
Publication Details
- Published
- 2025-04-28
- DOI
- https://doi.org/10.1109/icaidt66272.2025.00072
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00