TE1 mode emission in DFB semiconductor lasers based on hybrid mode resonance

We theoretically analyzed the hybrid transverse mode resonance characteristics of a π-phase-shifted anti-symmetric Bragg grating distributed feedback semiconductor laser and experimentally demonstrated this phenomenon for the first time. Using the reconstruction-equivalent chirp technique, the target grating profile was equivalently realized via holographic exposure combined with a sampled π-phase-shifted anti-symmetric grating structure. The laser achieves the hybrid resonance between the fundamental (TE0) and first-order (TE1) transverse modes, enabling simultaneous emission of the TE0 and TE1 modes from the front and rear facets, respectively, without the need for additional mode-order converters. The device operates stably within an injection current range up to 150 mA. At 150 mA, the output powers of the TE0 and TE1 modes reach 17.2 and 15.6 mW, respectively. Both modes emit at the same wavelength across the measured current range. Stable side-mode suppression ratios over 38 and 39 dB are observed for the TE0 and TE1 modes, respectively, from 60 to 150 mA. This laser holds significant potential for applications in optical communication, optical computing, optical sensing, and optical tweezers.