Development of a Software Tool for Hall Parameter Evaluation in Semiconductor Structures
The Hall effect is widely used in magnetic field sensors and contactless measurement systems. Accurate modeling of Hall-effect elements is essential for optimizing performance, especially in high-sensitivity applications under controlled conditions like vacuum. This paper introduces a graphical software tool for calculating key electrical parameters of Hall elements, such as Hall voltage, Hall coefficient, and carrier mobility. Users can input variables like semiconductor thickness, current, and magnetic field, with built-in models for materials like silicon, germanium, and gallium arsenide. Designed for vacuum operation, the tool supports simulation-based analysis, aiding researchers and educators in understanding and evaluating Hall-effect devices.
Authors
- Gergana Mironova (ORCID: https://orcid.org/0009-0003-8549-8740)
- Goran Goranov (ORCID: https://orcid.org/0009-0000-9169-7728)
Institutions
- Technical University of Gabrovo (BG)
Publication Details
- Published
- 2025-09-04
- DOI
- https://doi.org/10.3390/engproc2025104078
- Primary Topic
- Magnetic Field Sensors Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.00