Epitaxial SiC Development for High Nitrogen Incorporation

SiCOI is used as a lower cost substrate for power electronics and enables fabrication of MEMS and photonics platforms. Modification of the mechanical properties of SiC through doping is a potential pathway for improving resonator performance. This effort aimed to develop growth parameters for growth of 4H-SiC with nitrogen concentrations of 2x10 20 cm -3 with a smooth surface morphology for fabrication of SiCOI wafers for MEMS fabrication. Growth conditions that were investigated include substrate polarity, growth pressure, C/Si ratio, temperature, and carrier gas flow. Highly doped grown epiwafers contained particle defects which exhibited different morphologies for C- and Si-polarities.