Numerical Analysis of Correlation between UV Irradiation and Current Injection on Bipolar Degradation in PiN Diodes

We have proposed an E-V-C (Expansion-Visualization-Contraction) method by using UV irradiation, for screening potential defects which causes reliability issue called bipolar degradation in 4H-SiC devices. This method is based on the property that the REDG (recombination-enhanced dislocation glide) mechanism causing the bipolar degradation can be reproduced by UV irradiation. However, in order to apply this method as a screening, accurate quantification of the correlation between current density in forward bias and UV irradiance is required. This article describes how to set UV irradiation conditions (irradiance and irradiation time) to simulate forward biased current conditions.