Study of In-Grown Micropipes in 200 mm 4H-SiC (0001) Epitaxial Substrate
This paper details the defect inspection and characterization of the 200 mm 4H-SiC (0001) n-type substrate pre-and post-epitaxy. The findings in this paper focus on the characterization of the micropipes (MPs) present in the 200 mm SiC substrate. Following epitaxy, the observations include how the micropipes were propagated from the substrate to the epilayer. This study explores the closing of micropipes during epitaxial growth. As a part of our efforts to better understand the crystal structure and elemental composition of the micropipes in the epilayer, we have conducted SAED and EDX experiments. To the best of our knowledge, it is the first report to demonstrate the region near the micropipe sidewall surface, is remarkably Si-rich (~ 9:1) than in the region towards the bulk (~1:1) after SiC epitaxial growth.
Authors
- Navab Singh (ORCID: https://orcid.org/0000-0003-3299-9093)
- L. K. Bera (ORCID: https://orcid.org/0000-0003-3171-4463)
- Yee‐Chia Yeo (ORCID: https://orcid.org/0000-0003-1016-1687)
- Qin Gui Roth Voo
- Umesh Chand (ORCID: https://orcid.org/0000-0002-9302-5965)
- Eng Soon Tok (ORCID: https://orcid.org/0000-0001-5912-580X)
- Surasit Chung
- Shiv Kumar (ORCID: https://orcid.org/0000-0003-0655-9561)
- Hema Lata Rao Maddi (ORCID: https://orcid.org/0000-0001-5064-8436)
- F. Hébert
- Xinyi Li (ORCID: https://orcid.org/0000-0001-5436-9856)
- Anna Lee (ORCID: https://orcid.org/0000-0002-9114-1815)
Institutions
- Agency for Science, Technology and Research (SG)
- National University of Singapore (SG)
- GlobalFoundries (Cayman Islands) (KY)
Publication Details
- Journal
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
- Published
- 2025-09-05
- DOI
- https://doi.org/10.4028/p-d3ksws
- Citations
- 1
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- Agency for Science, Technology and Research