Interfacial Defect Suppression and Enhanced Optical Properties in InP Quantum Dots via Two-Step ZnSe Shelling Strategy

This study investigates the interfacial structural origin of enhanced optical performance in InP-based quantum dots (QDs) employing a 2-step ZnSe shelling strategy. By comparing InP/ZnSe/ZnS QDs synthesized via 1-step and 2-step shelling methods using identical InP cores, we demonstrate that the 2-step approach results in improved core-shell lattice matching, more favorable carrier dynamics, and enhanced thermal stability. These enhancements are attributed to the formation of an initial thin ZnSe interfacial layer, which facilitates uniform shell growth and suppresses interfacial defect formation. High-resolution transmission electron microscopy and elemental mapping via energy-dispersive X-ray spectroscopy analyses confirm the improved crystallinity and reduced oxygen-related trap states in the 2-step samples. The findings highlight the critical role of interfacial control in determining QD performance and establish the 2-step ZnSe shelling strategy as an effective route to achieving structurally and optically robust QD emitters for advanced optoelectronic applications.