Comparison of the charge transport properties of low and high flux grade redlen CdZnTe crystals

Abstract CdZnTe is widely used in gamma ray radiation detection for medical imaging and security, with growing interest in CdZnTe for synchrotron and XFEL detector materials at X-ray fluxes in excess of 10 10 photons·s -1 mm -2 . Understanding fundamental material properties allows for greater understanding of the relevancy of CdZnTe for use at photon light sources. This investigation uses alpha particle spectroscopy to directly compare the mobility-lifetime products (μτ) and mobilities (μ) of High-Flux (HF) and Low-Flux (LF) CdZnTe, produced by Redlen Technologies, and ascertain the differences in bulk charge carrier properties for both electrons and holes. This work presents average values of HF-CdZnTe to be μ e = 920 cm V -1 s -1 , μ h = 38 cm V -1 s -1 , μ e τ e = 4.4 × 10 -3 cm V -1 s -1 , μ h τ h = 1.6 × 10 -4 cm V -1 s -1 and LF-CdZnTe with μ e = 840 cm V -1 s -1 , μ e τ e = 12 × 10 -3 cm V -1 s -1 , μ h τ h = 0.4 × 10 -4 cm V -1 s -1 .