Comparative Performance Analysis of SiC MOSFET base Quasi-Z source DC-DC Converter

The effectiveness of a switched-capacitor-based DC-DC converter network combined with Silicon Carbide (SiC) MOSFETs in a 100W DC-DC boost converter is examined in this work. The high voltage gain, continuous input current characteristics, and shoot-through fault tolerance of the quasi-Z-source topology are well known. The study assesses the converter’s efficiency, voltage gain, and thermal performance by utilizing SiC MOSFETs’ high-efficiency and high-frequency operation characteristics. The results highlight the potential of SiC-based quasi-Z-source networks for low-power applications like portable electronics and renewable energy systems by showing notable performance increases when compared to conventional topologies. Changing the duty cycle and switching frequency of the converter has allowed for the measurement of its efficiency and power losses.