Low Temperature Drift Bandgap Reference Based on Parabolic Current Correction Architecture

Based on the 180 nm CMOS process, a high-precision current mode bandgap reference with ultra-low temperature drift coefficient was designed. The temperature coefficient of the current mode bandgap reference is analyzed, and a current mode curvature correction technology based on the parabolic current correction architecture is proposed to correct the temperature drift coefficient of the output voltage of the current mode bandgap reference, and the curvature compensation module uses only 6 MOS transistors, which consumes less than 200 nA current, and optimizes the temperature coefficient of the bandgap reference output voltage by 96%. The circuit does not use any trimming techniques, which reduces the chip area, reduces the cost of chip mass production, and greatly reduces the temperature drift coefficient over a wide temperature range. The supply voltage is in the range of $1.2 \mathrm{~V}-2.5 \mathrm{~V}$, the bandgap reference has a stable output of 0.6 V, a linear regulation of 0.2%, and a temperature drift coefficient of only $0.303 \times 10^{-6} /{ }^{\circ} \mathrm{C}$ in the range of $-40^{\circ} \mathrm{C}-125^{\circ} \mathrm{C}$. At an ambient temperature of $27^{\circ} \mathrm{C}$, the quiescent current is 50.4 uA, and the chip area is $0.3 \mathrm{~mm} \times 0.1 \mathrm{~mm}$.