Impact of Double-Gate Structure on Temporal and Reinforced Synaptic Weight Updates in Electrolytic-Gated Synapse Transistors

The impact of double-gate (DG) structure on synaptic weight updates was investigated in electrolytic-gated synapse transistors. DG devices showed reinforced conductance modulation in response to the application of different bottom-gate biases. Furthermore, the introduction of an additional gate provided access to an additional presynaptic input, allowing superlinear integration of synaptic weights for more efficient update processes.