New Insights in Orientation and Growth of 150 mm GaN on SiC for HEMT
This work explores the application of gallium nitride (GaN)-based solid-state devices for high-power, high-frequency, and high-temperature technologies. It presents an in-depth study of GaN on semi-insulating SiC substrates. The study demonstrates, through bow range investigation, optical microscopy, and X-ray diffraction (XRD), that by adapting growth parameters from those used for Si substrates to those suitable for SiC substrates, it is possible to achieve high-quality crystalline MOCVD growth both under on-axis and 4°off-axis substrate orientations.
Authors
- Carlo Riva (ORCID: https://orcid.org/0000-0001-5026-0888)
- Louise Lilja (ORCID: https://orcid.org/0000-0002-4235-753X)
- Cristiano Calabretta (ORCID: https://orcid.org/0000-0002-3796-0246)
- Emmanuel Roy (ORCID: https://orcid.org/0000-0002-4145-8558)
- Simona Boninelli (ORCID: https://orcid.org/0000-0002-7359-3586)
- Andrea Severino
- Cristophe Iatosti
- Nicolò Piluso (ORCID: https://orcid.org/0000-0001-8450-1416)
- Ferdinando Iucolano
- Alexandre Ellison
- Daniele Calabriso
Institutions
- United Silicon Carbide (United States) (US)
- STMicroelectronics (Czechia) (CZ)
- Institute for Microelectronics and Microsystems (IT)
Publication Details
- Journal
- Materials science forum
- Published
- 2025-09-04
- DOI
- https://doi.org/10.4028/p-stgt8t
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00