Performance Analysis of Back-to-Back Converter for Offshore Wind Energy Systems Using GaN-HEMTs

The increasing demand for renewable energy has positioned wind power as a key contributor to sustainable energy solutions. With the depletion of fossil fuel reserves and the growing concerns over greenhouse gas emissions, harnessing wind energy has become an imperative strategy for achieving global energy transition goals. Among the different wind power generation technologies, offshore wind farms are gaining prominence due to their higher wind speeds, lower turbulence, and reduced land constraints, leading to increased energy output and efficiency. For offshore wind applications, Permanent Magnet Synchronous Generators (PMSG) are widely favoured due to their high efficiency, compact design, and adaptability to variable wind speed conditions. These characteristics make PMSG-based wind turbines an attractive choice for large-scale renewable energy integration. However, conventional silicon-based back-to-back converters used in PMSG-based wind energy conversion systems face challenges such as high switching losses, thermal inefficiencies, and limited power density, which negatively impact the overall system performance. These issues can lead to increased cooling requirements, higher operational costs, and reduced reliability in offshore environments. This paper presents a 7.5 kW back-to-back converter performance analysis with Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) for offshore wind systems. GaN-HEMTs offer superior switching performance, reduced conduction losses, and enhanced thermal characteristics, significantly minimizing heat sink and filter requirements. The analytical and Simulink MATLAB results confirm that GaN-HEMT-based back-to-back converters outperform conventional Si-IGBTs in terms of reduced power losses, lower heat dissipation, filter requirement, and decreased Total Harmonic Distortion (THD). Additionally, the proposed solution demonstrates improved transient performance, contributing to enhanced system reliability, operational stability, and energy efficiency, making it a promising alternative for next-generation offshore wind applications.

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Published
2025-06-24
DOI
https://doi.org/10.1109/iccep65222.2025.11143700
Primary Topic
GaN-based semiconductor devices and materials
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article
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article

Performance Analysis of Back-to-Back Converter for Offshore Wind Energy Systems Using GaN-HEMTs

Gianluca Gatto, Michele Losito, Amit Kumar, Suganthi Ramasamy
GaN-based semiconductor devices and materials
article

Performance Analysis of Back-to-Back Converter for Offshore Wind Energy Systems Using GaN-HEMTs

Gianluca Gatto, Michele Losito, Amit Kumar, Suganthi Ramasamy
article en

Abstract

The increasing demand for renewable energy has positioned wind power as a key contributor to sustainable energy solutions. With the depletion of fossil fuel reserves and the growing concerns over greenhouse gas emissions, harnessing wind energy has become an imperative strategy for achieving global energy transition goals. Among the different wind power generation technologies, offshore wind farms are gaining prominence due to their higher wind speeds, lower turbulence, and reduced land constraints, leading to increased energy output and efficiency. For offshore wind applications, Permanent Magnet Synchronous Generators (PMSG) are widely favoured due to their high efficiency, compact design, and adaptability to variable wind speed conditions. These characteristics make PMSG-based wind turbines an attractive choice for large-scale renewable energy integration. However, conventional silicon-based back-to-back converters used in PMSG-based wind energy conversion systems face challenges such as high switching losses, thermal inefficiencies, and limited power density, which negatively impact the overall system performance. These issues can lead to increased cooling requirements, higher operational costs, and reduced reliability in offshore environments. This paper presents a 7.5 kW back-to-back converter performance analysis with Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) for offshore wind systems. GaN-HEMTs offer superior switching performance, reduced conduction losses, and enhanced thermal characteristics, significantly minimizing heat sink and filter requirements. The analytical and Simulink MATLAB results confirm that GaN-HEMT-based back-to-back converters outperform conventional Si-IGBTs in terms of reduced power losses, lower heat dissipation, filter requirement, and decreased Total Harmonic Distortion (THD). Additionally, the proposed solution demonstrates improved transient performance, contributing to enhanced system reliability, operational stability, and energy efficiency, making it a promising alternative for next-generation offshore wind applications.

University of Cagliari (IT)
Openalex Percentile: Top 85%
GaN-based semiconductor devices and materials
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Performance Analysis of Back-to-Back Converter for Offshore Wind Energy Systems Using GaN-HEMTs — Gianluca Gatto, Michele Losito, et al. · (2025) | TGRS Research Map | TGRS