Caughey-Thomas Mobility Model for High Performance RF IC Design

This study investigates the impact of design parameters on carrier mobility in a 2D MOSFET using the Caughey-Thomas mobility model, comparing it with the constant mobility approach. COMSOL-based simulations analyze mobility variations by modifying oxide thickness, height, width, and W/L ratio. Results show that increasing oxide thickness (0.5–2.5 nm) decreases terminal current from 3.2 µA to 1.8 µA, while increasing height (6–10 nm) reduces it from 2.6 µA to 1.99 µA. Similar reductions occur with width (80–140 nm) and W/L ratio (8–21). The Caughey-Thomas model shows a more significant decline, emphasizing its relevance for RF and high-frequency MOSFET optimization.