BEOL-Compatible Amorphous Oxide Semiconductor High-Voltage Transistors Achieving BFoM Beyond the GaAs Limit
Leveraging an offset top-gate (OTG) design and ALD-treated indium-tin oxide (ITO) channels, we present high-performance BEOL-compatible amorphous oxide semiconductor (AOS) high-voltage (HV) field-effect transistors (FETs). A long-channel (LC) FET features the highest Baliga’s figure of merit (BFoM) of 0.361 GW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> among all AOS FETs, surpassing the one-dimensional GaAs limit. Additionally, a short-channel (SC) HV FET achieves a record-low specific on-state resistance (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">R</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on, sp</sub>) of 9.15 × 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> mΩ·cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. These results highlight the potential of AOS FETs for enabling high power density and efficiency in on-die power management and periphery applications for monolithic 3D integrated circuits (M3DICs).
Authors
- Zijie Zheng (ORCID: https://orcid.org/0000-0001-8265-6019)
- Xiao Gong (ORCID: https://orcid.org/0000-0002-9243-1937)
- Geok Ing Ng (ORCID: https://orcid.org/0000-0002-9857-4189)
- Kaizhen Han (ORCID: https://orcid.org/0000-0002-2376-0921)
- Xuanqi Chen (ORCID: https://orcid.org/0009-0002-8620-5041)
- Hanchao Li (ORCID: https://orcid.org/0009-0009-2921-3353)
- Dong Zhang (ORCID: https://orcid.org/0000-0003-1629-4886)
- Yue Chen (ORCID: https://orcid.org/0000-0002-5079-0579)
- Hanlin Xie (ORCID: https://orcid.org/0000-0002-1974-2018)
- Chen Sun (ORCID: https://orcid.org/0000-0001-5695-7803)
- Jiawei Xie (ORCID: https://orcid.org/0009-0005-4365-0972)
- Rui Shao (ORCID: https://orcid.org/0009-0003-5952-4757)
- Yuxuan Wang (ORCID: https://orcid.org/0009-0000-7040-7058)
- Wei Shi (ORCID: https://orcid.org/0009-0004-5305-4130)
Institutions
- Agency for Science, Technology and Research (SG)
- National University of Singapore (SG)
- Nanyang Technological University (SG)
- Singapore Science Park (SG)
- Institute of Microelectronics (SG)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2025-09-04
- DOI
- https://doi.org/10.1109/led.2025.3606437
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National University of Singapore
- Ministry of Education - Singapore