Monolithically Integrated RTL-Based Inverters for Gate Driver IC Using <i>β</i>-Ga₂O₃ MOSFETs

The gate driver interfaces power MOSFETs with digital control circuits by providing the necessary drive current for rapid switching. This work demonstrates a monolithically integrated gate driver integrated circuit (IC) based on β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>3</roman></sub> resistor-transistor logic (RTL) inverter, utilizing enhancement-mode multifinger (MF) MOSFETs and recessed epitaxy-based resistors. The 0.785-mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sup> chip integrates two RTL inverters in a noninverting configuration and achieves voltage gains of 11.9 and 12.2 V/V with high/low noise margins of 3.4 /1.3 V and 3.0/1.6 V at a 15-V supply. Dynamic characterization shows a switching speed of 9.4 μs with a 5-V control input, producing output swings up to 15 V. These results validate the suitability of RTL-based gate drivers for β-Ga<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>2</roman></sub>O<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><roman>3</roman></sub> power ICs and highlight their potential for scalable monolithic integration.