Demonstration of Chloride Ion Modulation- Doped InGaZnO Dual-Channel Synaptic Transistors

This work demonstrates the chloride ion (Cl<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup>) modulation-doped InGaZnO dual-channel synaptic transistors (MOD-DCSTs) fabricated by mist chemical vapor deposition (mist-CVD). MOD-DCST successfully emulates essential synaptic behaviors, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-rate and spike-number-dependent plasticity (SRDP and SNDP), and long-term potentiation/depression (LTP/LTD). Due to the limited mobility of chloride ions in the absence of an electric field and the prolonged retention of the charges in the front channel, MOD-DCST exhibits good long-retention characteristics, which helps maintain the synaptic weight for weight modulation in neuromorphic computing. Furthermore, the convolutional neural network (CNN) using the weight quantization method achieves a high recognition accuracy of 94.95% on the MNIST dataset, which suggests that MOD-DCST is a promising candidate for neuromorphic computing applications.