A Two-Stage Systematic Simulation Modeling Approach for Conducted Emissions in DC-DC Boost Converters
The development of wide-bandgap semiconductor devices and advanced integration is driving power electronic converters toward higher frequencies, voltages, and power densities, thereby posing new challenges for electromagnetic compatibility (EMC) design. To address these challenges, this paper presents a two-stage systematic simulation modeling approach for analyzing conducted emissions (CE) in Boost converters. In the first stage, a comprehensive CE model is developed. This model includes high-frequency representations of noise sources, propagation path models that account for the high-frequency characteristics of passive components and transmission lines, near-field coupling effects caused by parasitic capacitors, and measurement instrument models that incorporate actual measurement bandwidth. In the second stage, the influence of component model accuracy on overall CE simulation accuracy is evaluated. Based on this evaluation, the CE model is further simplified to enhance simulation efficiency while preserving accuracy. Using a Boost converter for electric vehicles as a case study, both common-mode (CM) and differential-mode (DM) emissions are simulated over the 150 kHz–108 MHz band and compared against experimental measurements. Results demonstrate that the proposed approach achieves high simulation accuracy and improves computational efficiency, providing a reliable framework for accelerating EMC design in power electronic systems.
Authors
- Wenzhe Su (ORCID: https://orcid.org/0000-0002-3164-6723)
- Hong Li (ORCID: https://orcid.org/0000-0002-8117-8980)
- Zhenyu Zhao (ORCID: https://orcid.org/0000-0003-1501-4272)
- Yanjun Li (ORCID: https://orcid.org/0000-0002-4206-4833)
- Xueyang Liu (ORCID: https://orcid.org/0009-0005-4063-9938)
Institutions
- National University of Singapore (SG)
- Beijing Jiaotong University (CN)
- Zhejiang University of Technology (CN)
- Zhejiang University (CN)
Publication Details
- Journal
- IEEE Transactions on Transportation Electrification
- Published
- 2025-09-03
- DOI
- https://doi.org/10.1109/tte.2025.3605664
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China