Design of Ultrawideband High-Efficiency GaN-Based Power Amplifiers
This paper provides a comprehensive review of ultra-wideband (UWB) high-efficiency power amplifier (PA) design based on gallium nitride (GaN) technology. It covers key challenges and advancements in three major architectures: reactive matching power amplifiers (RMPAs), distributed power amplifiers (DPAs), and load-modulated balanced amplifiers (LMBAs). The study highlights the trade-offs between bandwidth, efficiency, output power, and gain, which are critical in UWB PA design. Techniques such as reactive impedance matching, load modulation, and continuous-mode operation are discussed in detail, along with innovative methods like the nested-mode PA, sequential load-pull technique, and quasi-MMIC designs. This paper also explores recent developments in DPAs and LMBAs that address limitations in efficiency at power back-off, output power, and gain. Future research directions emphasize miniaturization, integration, and enhanced performance for UWB applications in communication, military, and satellite systems. The insights presented aim to guide researchers in achieving optimal PA designs by balancing conflicting performance metrics.
Authors
- Jinyu Wang (ORCID: https://orcid.org/0009-0001-1623-6013)
- Yongle Wu (ORCID: https://orcid.org/0000-0002-3269-7143)
- Jihu Li
- Nam‐Young Kim (ORCID: https://orcid.org/0000-0003-4264-2928)
- Fan Yang (ORCID: https://orcid.org/0000-0002-1097-5552)
- Cong Wang (ORCID: https://orcid.org/0000-0002-2863-0309)
- Fan‐Yi Meng (ORCID: https://orcid.org/0000-0001-8748-9520)
- Qun Wu (ORCID: https://orcid.org/0000-0001-9144-048X)
- Yuchen Wei (ORCID: https://orcid.org/0000-0002-6632-4492)
- Jinliang Gao (ORCID: https://orcid.org/0000-0002-6662-0187)
- Yang Li (ORCID: https://orcid.org/0000-0002-9773-1605)
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Shandong University (CN)
- Kwangwoon University (KR)
- Harbin Institute of Technology (CN)
- Heilongjiang Institute of Technology (CN)
Publication Details
- Journal
- IEEE Microwave Magazine
- Published
- 2025-09-03
- DOI
- https://doi.org/10.1109/mmm.2024.3520028
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province
- Key Technology Research and Development Program of Shandong