A General and Modular Approach to Solid-State Integration of Zero-Dimensional Quantum Systems

Here, we present an all-electrical readout mechanism for quasi-0D quantum states (0D-QS), such as point defects, adatoms, and molecules, that is modular and general, providing an approach that is amenable to scaling and integration with other solid-state quantum technologies. Our approach relies on the creation of high-quality tunnel junctions via the mechanical exfoliation and stacking of multilayer graphene (MLG) and hexagonal boron nitride (hBN) to encapsulate the target system in an MLG/hBN/0D-QS/hBN/MLG heterostructure. This structure allows for all-electronic spectroscopy and readout of candidate systems through a combination of coulomb and spin-blockade. As a proof of principle, we demonstrate electronic tunneling spectroscopy of point defects in hBN and the molecular qubit vanadyl phthalocyanine. Our approach demonstrates a new pathway for the incorporation of molecules and atomic defects into solid-state quantum devices and circuits along with a readout scheme that does not rely on highly constrained optical processes for photonic readout.

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Institutions

Publication Details

Journal
Nano Letters
Published
2025-09-03
DOI
https://doi.org/10.1021/acs.nanolett.5c03125
Citations
2
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
2.49

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article

A General and Modular Approach to Solid-State Integration of Zero-Dimensional Quantum Systems

Daniel A. Pharis, Jay Gupta, Michael E. Flatté, P. C. Canfield et al.
2 citations
Nano Letters
Quantum and electron transport phenomena
2.49
article

A General and Modular Approach to Solid-State Integration of Zero-Dimensional Quantum Systems

Daniel A. Pharis, Jay Gupta, Michael E. Flatté, P. C. Canfield, Ezekiel Johnston‐Halperin, Ferdous Ara, Takashi Taniguchi, Michael C. Hamilton, Mingyu Xu, R. Douglas Greer, William Koll, Marzieh Kavand, K. Maleki, Danna E. Freedman, Ethel Perez-Hoyos, Zoe Phillips
article en
2 citations

Abstract

Here, we present an all-electrical readout mechanism for quasi-0D quantum states (0D-QS), such as point defects, adatoms, and molecules, that is modular and general, providing an approach that is amenable to scaling and integration with other solid-state quantum technologies. Our approach relies on the creation of high-quality tunnel junctions via the mechanical exfoliation and stacking of multilayer graphene (MLG) and hexagonal boron nitride (hBN) to encapsulate the target system in an MLG/hBN/0D-QS/hBN/MLG heterostructure. This structure allows for all-electronic spectroscopy and readout of candidate systems through a combination of coulomb and spin-blockade. As a proof of principle, we demonstrate electronic tunneling spectroscopy of point defects in hBN and the molecular qubit vanadyl phthalocyanine. Our approach demonstrates a new pathway for the incorporation of molecules and atomic defects into solid-state quantum devices and circuits along with a readout scheme that does not rely on highly constrained optical processes for photonic readout.

Nano LettersVol. 25(37)
University of Iowa (US), University of Alabama (US), Iowa State University (US), National Institute for Materials Science (JP), Ames National Laboratory (US), Astronomy and Space (AU), The Ohio State University (US), Massachusetts Institute of Technology (US), Eindhoven University of Technology (NL)
National Science Foundation, U.S. Department of Energy, Ohio State University, University of Michigan, Iowa State University, Asian Office of Aerospace Research and Development, Ministry of Education, Culture, Sports, Science and Technology, Directorate for Mathematical and Physical Sciences, Materials Research Science and Engineering Center, Harvard University, Japan Society for the Promotion of Science, Division of Materials Research, Division of Graduate Education, Office of Multidisciplinary Activities, Core Research for Evolutional Science and Technology, Air Force Research Laboratory, Division of Materials Sciences and Engineering
Openalex Percentile: Top 10%
Quantum and electron transport phenomena
2.49
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